TRANSISTOR / DIODE: Soviet Semiconductor Device Designations

This has been transcribed from the U.S. Joint Publications Research Service No. 569 from 1978.  Translations of Eastern European Scientific Affairs.   Among other things, it contains a guide to Soviet semiconductors.  The publication can be found in this folder.   

It's a handy guide to Soviet transistor and diode numbering, as well as their intended purpose.  If you are looking for datasheets, jump to this post.

SOVIET SEMICONDUCTOR DEVICE DESIGNATIONS

Soviet semiconductor devices are designated in conformity with the following: 

            devices made before 1963 according to State Standard 5461-59 (for example F403)

            devices made after 1963 according to State Standard 10862- 64 (for example GT308)

            and after 1973 according to State Standard 10862- 74

SOVIET STATE STANDARD 5461-59 (PRE-1963)

The designation of semiconductor devices according to State Standard 5461-59 consists of two or three elements. 

FIRST ELEMENT: 

D                 diodes 
P (MP)        transistors 

SECOND ELEMENT:  a number that characterises the purpose of the device. 

FOR DIODES: 

point-contact germanium               001-100
point-contact silicon                          101-200
junction silicon         201-300
junction germanium 301-400
mixer microwave 401-500
multiplier         501-600
video detector         601-700
parametric germanium 701-749
parametric silicon 750-800
stabilitrons         801-900
varicaps 901-950
tunnel diodes 951-1000 
rectifier columns 1001-1100 

FOR TRANSISTORS: 

low-power germanium low-frequency         001-100
low-power silicon low-frequency                 101-200
power germanium low-frequency         201-300
power silicon low-frequency                 301-400
low-power germanium high-frequency         401-500
low-power silicon high-frequency         501-600
power germanium high-frequency         601-700
power silicon high-frequency         701-800

THIRD ELEMENT:  a letter showing the modification of the device. In the absence of a modification no letter is placed. 

Example of designation: 

P15A transistor, low-power, germanium, low-frequency, modification A

P701 transistor, power, silicon, high-frequency

SOVIET STANDARD 10862-64 (1963-1973)

The designation of semiconductor devices according to State Standard 10862-64 is done with four elements. 

FIRST ELEMENT: a letter or digit indicating the semiconductor material: 

G (1) germanium
K (2) silicon
A (3) gallium arsenide 

The designation beginning with the letter G is for germanium semiconductor devices operating at a temperature below +60° C. 

The designation beginning with the letter K is for silicon semiconductor devices operating at temperatures below +85° C. 

Designations beginning with the digits 1, 2 or 3 are intended for semi-conductor devices operating at higher temperatures: 

germanium up to +70° C
silicon up to +125° C

SECOND ELEMENT:   a letter designating the type of device. 

D,  diodes

T,  transistors

V,  varicaps

A,  microwave diodes

F,   photo- devices

N,  uncontrolled multilayer switching devices (dynistors)

U,  controlled multilayer switching devices (thyristors)

I,  tunne

3,  stabilitrons

Ts, rectifier columns and units

 
THIRD ELEMENT:  a number designating the purpose or electrical of the semiconductor device: 

TRANSISTORS LOW POWER  (T) 

for low frequencies                101-199
for medium frequencies     201-299
for high frequencies              301-399

TRANSISTORS, MEDIUM POWER (T) 

for low frequencies            401-499
for medium frequencies     501-599
for high-frequencies           600-699

POWER TRANSISTORS  (T) 

for low frequencies            701-799
for medium frequencies     801-899
or high frequencies            910-999

DIODES  (D) 

rectifier, low-power            101-199
rectifier, medium-power     201-299
rectifier, power                    301-399
general-purpose                  401-499

pulse                                   501-999

             

      
PULSE VARICAPS  (V) 

tunable                                101-199
multiplier                            201-299

MICROWAVE DIODES  (A) 

mixer                                 101-199
detector                              201-299
modulator                          301-399
parametric                         401-499
switching                           501-599

PHOTODEVICES  (F) 

diodes                                101-199
transistors                           201-299

FOURTH ELEMENT:  a letter designating the division of the technological type of groups. 

For example: 

GT105A: germanium transistor, low-power, low-frequency of group A, operating at temperature up to +60° C. 

2T105A: silicon transistor, low-power, low-frequency of group A, operating at temperature up to +120° C. 

The designations of selenium rectifiers consist of letters and digits. For example, AVS-I5-60. The letters designate aluminium rectifier; selenium, and as for the digits: 

            the first group gives the length of the side of the square washer or the diameter in mm; 

            the second group gives the number corresponding to this rectifier. 

For low-power rectifiers a designation is used in which the average value of the rectified current (mA) and the supplied variable voltage (V) are placed after the letters. For example: AV3-6-270M. The letter M signifies miniature.